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Evaluation of electrical and optical properties of indium tin oxide thin film using chemical mechanical polishing technique
Authors:Yong-Jin Seo  Gwon-Woo Choi
Affiliation:a Department of Electrical Engineering, Daebul University, 72, Sanho-ri, Samho-myun, Youngam-kun, Chonnam-do 526-702, Republic of Korea
b Department of Electrical Engineering, Chosun University, Gwangju 501-759, Republic of Korea
Abstract:In this study, the optimum process parameters and the influences of their process parameters were investigated for indium tin oxide-chemical mechanical polishing (ITO-CMP) with the sufficient removal rate and the good planarity. And then, the optical property such as transmittance and absorption efficiency, and the electrical characteristics such as sheet resistance, carrier density and Hall mobility were discussed in order to evaluate the possibility of CMP application for the organic light emitting display (OLED) device using an ITO film. Light transmission efficiency and current-voltage characteristics of ITO thin film were improved after CMP process using optimized process parameters compared to that of as-deposited thin film before CMP process.
Keywords:Chemical mechanical polishing (CMP)  Indium tin oxide (ITO)  Process parameters  Removal rate  Within-wafer non-uniformity (WIWNU)
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