Electrochemically deposited thermoelectric n-type Bi2Te3 thin films |
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| Authors: | BY Yoo JR Lim MA Ryan NV Myung |
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| Affiliation: | a Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA 92521, USA
b Materials and Device Technology Group, Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA |
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| Abstract: | Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered BixTey/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited BixTey thin films were measured before and after annealing and compared to those of bulk Bi2Te3. Annealing at 250 °C in reducing H2 atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of −188.5 μV/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films. |
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| Keywords: | Bismuth Tellurium Electrodeposition Thermoelectric Microstructure |
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