Macro- and micro-strain in GaN nanowires on Si(111) |
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Authors: | Jenichen B Brandt O Pfüller C Dogan P Knelangen M Trampert A |
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Affiliation: | Paul-Drude-Institut fuer Festkoerperelektronik, Berlin, Germany. bernd.jenichen@pdi-berlin.de |
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Abstract: | We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from ± (0.015)% to ± (0.03)%. This micro-strain contributes to the linewidth observed in low-temperature photoluminescence spectra. |
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