Application of Ti: W barrier metallization for integrated circuits

Aluminum metallization is the most widely used for contacts and interconnections in integrated circuits. However, the solid state diffusion of aluminum in silicon during contact sintering or high temperature packaging can result in junction shorting or leakage in shallow (<1 μm) emitter-base junction devices. The interposition of a barrier metal between the aluminum and the silicon is one solution to this problem. A sputter-deposited pseudo-alloy of Ti:W (10:90 wt.%) with PtSi contacts is suitable for this application. Resistivity ratio measurements on SiO₂/ ti:W/Al film test samples have shown that the resistivity of aluminum increases owing to diffusion of titanium or tungsten into the aluminum. However, the kinetic data show that no more than a 10% increase in the resistivity of the aluminum can be expected in the useful life of a device. High current stress data show that Ti:W/Al interconnections are comparable with those of aluminum films. Auger depth profiling of si/Ti:W/Al samples annealed at 450, 500 and 550°C in N₂ shows no aluminum at the Si-(Ti:W) interface. Application of the PtSi/Ti:W/Al metallization system for large-scale integrated circuits is described.