| 分子束外延PbTe/Pb_(0.88)Sn_(0.12)Te量子阱持续光电导与导带不连续 |
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| 引用本文： | 宋航,陈伟立,史智盛,傅义. 分子束外延PbTe/Pb_(0.88)Sn_(0.12)Te量子阱持续光电导与导带不连续[J]. 红外与毫米波学报, 1992, 11(5) |
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| 作者姓名： | 宋航 陈伟立 史智盛 傅义 |
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| 作者单位： | 中国科学院长春物理研究所，中国科学院长春物理研究所，中国科学院长春物理研究所，中国科学院长春物理研究所 吉林，长春，130021，吉林，长春，130021，吉林，长春，130021，吉林，长春，130021 |
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| 摘 要： | 从理论和实验上研究了分子束外延生长的PbTe/Pb_(0.88)Sn_(0.12)Te多量子阱结构材料中的持续光电导过程.认为材料中持续光电导的衰减是依赖于隧穿协助的电子-深中心复合过程.理论计算与实验结果一致.通过对持续光电导衰减规律的理论拟合,得到了PbTe/Pb_(0.88)Sn_(0.12)Te量子阱材料的导带不连续值及两类能谷间的能量差.
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| 关 键 词： | PbTe/PbSnTe 分子束外延 光电导 隧穿复合 |
PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE |
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| Song Hang,Chen Weili,Shi Zhisheng,Fu Yi. PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE[J]. Journal of Infrared and Millimeter Waves, 1992, 11(5) |
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| Authors: | Song Hang Chen Weili Shi Zhisheng Fu Yi |
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| Abstract: | The low temperature permanent photoconductivity in PbTe/Pb_(0.88)Sn_(0.12)Temulti-quantum wells grown by molecular beam epitaxy was studied both theoretically andexperimentally. The decay of the photoconductivity was analyzed in terms of tunneling-as-sisted electron-trap recombination. The theoretical result agrees with the experimental one.The band offsets of both the [111] valley and the others at PbTe/Pb_(0.88)Sn_(0.12)Te interfaceswere estimated by fitting the calculated decay curve of the photoconductivity to the experi-ment data. |
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| Keywords: | PbTe/PbSnTe molecular beam epitaxy photoconductivity tunneling-assisted recombination. |
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