对胶体球光刻中单层胶体晶体曝光特性的研究

对胶体球光刻中单层胶体晶体(MCC)的曝光特性进行了研究。利用磁控溅射的方法在蓝宝石衬底上生长SiO2薄膜并旋涂光刻胶,通过固液界面自组装的方法在光刻胶上制备了单层胶体晶体。胶体球光刻利用单层胶体晶体作为微透镜阵列,通过紫外曝光的方法在光刻胶上制备微孔阵列。光刻胶上图形的周期性与胶体球的直径有关,并且大直径的胶体球的聚光性能要强于小直径胶体球,在曝光过程中随着曝光时间的增加,由于曝光量的增加以及光刻胶的漂白现象,光刻胶上微孔的尺寸也在增加。最后以曝光后的光刻胶为掩膜,将感应耦合等离子体刻蚀技术(ICP)以及湿法腐蚀相结合,制备出了图形化蓝宝石(PSS)衬底。

Study on Exposure Characteristics of Monolayer Colloidal Crystals in Colloidal Sphere Photolithography

The exposure characteristics of monolayer colloidal crystals (MCCs)in colloidal sphere photolithography were studied.SiO2 thin films were grown on sapphire substrates by magnetron sputtering and spin-coating with the photoresist.Monolayer colloidal crystals were fabricated on the photoresist by solid-liquid interface self-assembly.Colloidal sphere lithography used monolayer colloidal crystals as micro lens arrays to fabricate micropore arrays on the photoresist by UV exposure.The periodicity of the pattern on the photoresist was related to the diameter of the colloidal sphere,and the focusing property of the large-diameter colloidal sphere was stronger than that of the small-diameter colloidal sphere.In the process of exposure,the size of the micropore on the photoresist was increased with the increase of the exposure time due to the increase of the exposure and bleaching of the photoresist.Finally,the patterned sapphire substrate (PSS)was prepared by using the exposed photoresist as a mask,coupled with inductively coupled plasma etching (ICP)and wet etching.