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Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes
Yipeng Liang, Jianping Liu, Masao Ikeda, Aiqin Tian, Renlin Zhou, Shuming Zhang, Tong Liu, Deyao Li, Liqun Zhang, Hui Yang. Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. Journal of Semiconductors, 2019, 40(5): 052802. doi: 10.1088/1674-4926/40/5/052802 Y P Liang, J P Liu, M Ikeda, A Q Tian, R L Zhou, S M Zhang, T Liu, D Y Li, L Q Zhang, H Yang, Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes[J]. J. Semicond., 2019, 40(5): 052802. doi: 10.1088/1674-4926/40/5/052802.Export: BibTex EndNote
Authors:Yipeng Liang  Jianping Liu  Masao Ikeda  Aiqin Tian  Renlin Zhou  Shuming Zhang  Tong Liu  Deyao Li  Liqun Zhang  Hui Yang
Affiliation:1. School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China;2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Science, Suzhou 215123, China;3. Key Laboratory of Nanodevices and Applications, Chinese of Academy of Science, Suzhou 215123, China;4. Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Abstract:The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs.
Keywords:GaN   green laser diode   inhomogeneous broadening   threshold current density
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