超宽禁带半导体Ga2O3微电子学研究进展

半导体材料Ga2O3是继宽禁带半导体材料SiC/GaN之后新兴的直接带隙超宽禁带氧化物半导体,其禁带宽度为4.5~4.9eV,击穿电场强度高达8MV/cm(是SiC及GaN的2倍以上),物理化学稳定性高,在发展下一代电力电子学和固态微波功率电子学领域具有较大的潜力。自2012年第一只Ga2O3场效应晶体管诞生以来,Ga2O3微电子学的研究呈现快速发展态势。本文综述了β-Ga2O3单晶材料和外延生长技术以及β-Ga2O3二极管和β-Ga2O3场效应管等方面的研究进展,介绍了β-Ga2O3材料和器件的新工艺、新器件结构以及性能测试结果,分析了相关技术难点和创新思路,展望了Ga2O3微电子学未来的发展趋势。

Advances in Ultra-Wide Bandgap Semiconductor Ga2O3 Microelectronics

Semiconductor material Ga2O3 is the emerging ultra-wide bandgap oxide semiconductor material with direct bandgap after the wide bandgap materials SiC/GaN,the bandgap width is 4.5-4.9 eV,the breakdown field strength is up to 8 MV/cm(more than 2 times those of SiC and GaN),the physicochemical stability is high,it has a great potential in the development of the next generation of power electronics and solid state microwave power electronics.Since the first Ga2O3 field effect transistor was invented in 2012,the scientific research of Ga2O3 microelectronics has shown a rapid development trend.The research progress of β-Ga2O3 single crystal material,the epitaxial growth technology,β-Ga2O3 diode and β-Ga2O3 field-effect transistor is reviewed.New processes,new device structures and performance test results of β-Ga2O3 are introduced,and the technical difficulties and innovative ideas are analyzed.The future development trend of Ga2O3 microelectronics is prospected.