大马士革工艺中等离子体损伤的天线扩散效应

等离子体技术的广泛应用给工艺可靠性带来了挑战,等离子体损伤的评估成为工艺可靠性评估的重要内容之一。针对大马士革工艺中的等离子体损伤问题,提出了天线扩散效应,确定了相应工艺的天线扩散系数,提高了工艺可靠性评估的准确性。根据不同介质层沉积对器件的影响,确定了等离子体增强化学气相沉积(PECVD)是大马士革工艺中易造成等离子体损伤的薄弱环节之一。实验结果表明,同种工艺满足相同的天线扩散效应,此时工艺参数的改变不会影响天线扩散系数。对带有不同天线结构的PMOS器件进行可靠性分析,得知与密齿状天线相比,疏齿状天线对器件的损伤更严重,确定了结构面积和间距是影响PECVD工艺可靠性水平的关键参数。

Antenna Expansion Effect of the Plasma Induced Damage in Damascene Process

The wide application of plasma technology makes a challenge to process reliability,the evaluation of the plasma damage becomes an important part of the process reliability evaluation.Based on the analysis of the plasma induced damage in Damascene process,the antenna expansion effect was proposed and the expansion coefficient was determined,the accuracy of the process reliability evaluation was improved.According to the influence of different dielectric layer deposition on the device,it determined that plasma enhance chemical vapor deposition (PECVD)was one of the weakness for the plasma induced damage in Damascene process.The experimental result shows that one process has the same antenna expansion effect,and changes of process parameters do not affect the expansion coefficient.The reliability characteristics of the PMOS device with different antenna structures were compared.The compared results show that sparse comb antenna makes more serious damage on the device than dense comb antenna with the same antenna area.It means that the antenna area and spacing are the key parameters affecting the reliability of PECVD process.