| VHF-PECVD制备不同衬底温度微晶硅薄膜结构研究 |
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| 引用本文： | 张晓丹,赵颖,高艳涛,朱锋,魏长春,孙建,耿新华,熊绍珍.VHF-PECVD制备不同衬底温度微晶硅薄膜结构研究[J].电子学报,2005,33(5):920-922. |
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| 作者姓名： | 张晓丹 赵颖 高艳涛 朱锋 魏长春 孙建 耿新华 熊绍珍 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所,天津 300071; 南开大学光电子薄膜器件与技术天津市重点实验室,天津 300071; 南开大学光电信息技术科学教育部重点实验室,天津 300071 |
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| 基金项目： | 国家重点基础研究发展规划项目(No.G2000028202，No.G2000028203)，国际合作项目(No.2002DF00051)，国家高新技术研究发展计划(No.2002303261) |
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| 摘 要： | 采用微区拉曼散射、傅立叶变换红外吸收和光热偏转谱对VHF-PECVD制备的不同衬底温度硅薄膜进行了微结构分析.结果表明:随衬底温度的升高,薄膜逐渐由非晶向微晶过渡,晶化率(Xc)逐渐增大,样品中的氢含量逐渐降低.在200~250℃条件下制备的微晶硅薄膜具有低的缺陷密度.通过优化工艺条件制备出了效率达7.1%的单结微晶硅太阳电池,电池厚度仅为1.2μm,且没有ZnO背反射电极.
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| 关 键 词： | 甚高频等离子体增强化学气相沉积 微晶硅 衬底温度 |
| 文章编号： | 0372-2112(2005)05-0920-03 |
| 收稿时间： | 2004-02-02 |
Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures |
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| ZHANG Xiao-dan,ZHAO Ying,GAO Yan-tao,ZHU Feng,WEI Chang-chun,SUN Jian,GENG Xin-hua,XIONG Shao-zhen.Structural Study of Microcrystalline Silicon Films Fabricated by VHF-PECVD at Different Substrate Temperatures[J].Acta Electronica Sinica,2005,33(5):920-922. |
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| Authors: | ZHANG Xiao-dan ZHAO Ying GAO Yan-tao ZHU Feng WEI Chang-chun SUN Jian GENG Xin-hua XIONG Shao-zhen |
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| Affiliation: | Institute of Photo-electronics Thin Film Devices and Technique of Nankai University,Tianjin 300071,China; Key Laboratory of Photo-electronics Thin Film Devices and Technique of Tianjin,Tianjin 300071,China; Key Laboratory of Opto-electronic Information Science and Technology of Nankai University,Ministry of Education,Tianjin 300071,China |
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| Abstract: | A series of microcrystalline silicon thin films prepared at different substrate temperature (Ts) by very high frequency plasma enhanced chemical vapor deposition were analyzed by Micro-Raman spectroscopy,Fourier transform infrared spectroscopy and photo thermal deflection spectroscopy.The results showed that structure of sample evaluated from amorphous to microcrystalline and hydrogen content decreased with the increase of Ts.Microcrystaline silicon thin films prepared between 200℃ and 250℃ indicated low defect density.Microcrystalline silicon solar cells with convertion efficiency 7.1% was fabricated by VHF-PECVD.There was no ZnO back reflector and thickness of solar cell was only 1.2μm. |
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| Keywords: | very high frequency plasma enhanced chemical vapor deposition microcrystalline silicon substrate temperature(Ts) |
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