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Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
Authors:Tsvetanka S Zheleva  Scott A Smith  Darren B Thomson  Kevin J Linthicum  Pradeep Rajagopal  Robert F Davis
Affiliation:(1) Department of Materials Science and Engineering, North Carolina State University, Box 7907, 27695-7907 Raleigh, NC;(2) Present address: Army Research Lab, 2800 Powder Mill Road, 20783 Adelphi, MD
Abstract:
Keywords:GaN  lateral epitaxy  metalorganic vapor phase epitaxy (MOVPE)  microstructure  pendeo-epitaxy  selective etching  selective growth  transmission electron microscopy (TEM)
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