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IGBT驱动模块的研究
引用本文:王学奎,杨旭红,叶建华,钱虹. IGBT驱动模块的研究[J]. 上海电力学院学报, 2008, 24(3): 295-298
作者姓名:王学奎  杨旭红  叶建华  钱虹
作者单位:上海电力学院,电力与自动化工程学院,上海,200090
基金项目:上海市重点学科建设项目,上海市教委资助项目,上海市科委资助项目,上海市教委资助项目,上海电力学院校科研和教改项目
摘    要:介绍了IGBT的驱动特性,对IGBT专用集成驱动芯片EXB841和M57962AL作了比较研究.根据EXB841在应用中存在的问题,提出了一种优化设计电路.并介绍了IGBT与M57962AL两种驱动模块的优缺点.

关 键 词:保护阈值  软关断  动作阈值  双电源
收稿时间:2008-06-23

The Research of IGBT's Drive Module
WANG Xue-kui,YANG Xu-hong,YE Jian-hua and QIAN Hong. The Research of IGBT's Drive Module[J]. Journal of Shanghai University of Electric Power, 2008, 24(3): 295-298
Authors:WANG Xue-kui  YANG Xu-hong  YE Jian-hua  QIAN Hong
Affiliation:School of Electric Power & Automation Engineering, Shanghai University of Electric Power, Shanghai 200090, China,School of Electric Power & Automation Engineering, Shanghai University of Electric Power, Shanghai 200090, China,School of Electric Power & Automation Engineering, Shanghai University of Electric Power, Shanghai 200090, China and School of Electric Power & Automation Engineering, Shanghai University of Electric Power, Shanghai 200090, China
Abstract:The drive characteristics of IGBT are introduced;research is conducted on EXB841 and M57962AL,two CMOS chips that are used to drive IGBT.Because of the deficiencies of EXB841's application.The paper proposes an optimized circuit,introducing M57962AL,and comparing the advantages and disadvantages of the two drive modules simply.
Keywords:threshold of protection  soft shutdown  threshold of action  double power
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