P-type as-doping of Hg1−xCdxTe grown by MOMBE |
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Authors: | L H Zhang S D Pearson W Tong B K Wagner J D Benson C J Summers |
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Affiliation: | (1) Advanced Materials Technology Division, Georgia Tech Research Institute, Georgia Institute of Technology, 30332-0850 Atlanta, GA;(2) NVESD, AMSEL-RD-ST/IRTB, 22060-5806 Fort Belvior, VA |
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Abstract: | This paper presents a study of both as-grown and annealed p-type Hg1−xCdxTe layers that were doped using a cadmium arsenide source. It is shown that by using a metalorganic molecular beam epitaxy
system stable and reproducible p-type HgCdTe:As layers were obtained through direct homogeneous doping. The hole concentrations
in the as-grown and annealed samples were 8 × 1016 to 3 × 1017 cm−3 with mobilities of 120∼300 cm2/V-s. The as-grown HgCdTe:As layers had very good crystalline quality with double crystal x-ray rocking curve line-widths
ranging from 27 to 42 arc sec. Experimental data demonstrated a strong correlation of hole concentration and mobility with
the surface morphology and crystalline quality as a function of Hg flux. The optimum growth window was defined by a narrow
range of Hg flux values that gave a smooth film with fewer voids, and higher hole concentrations and mobilities than were
obtained at lower or higher Hg fluxes. This correlation between the growth window defined by the surface morphology and the
dopant behavior was very important for the successful growth of p-type As-doped HgCdTe materials. |
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Keywords: | As-doping HgCdTe metalorganic molecular beam epitaxy (MOMBE) p-type |
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