Bulk Grain Resistivity of ZnO-Based Varistors |
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| Authors: | A. C. Caballero D. Fernández Hevia J. de Frutos M. Peiteado J. F. Fernández |
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| Affiliation: | (1) Dpto. de Electrocerámica, Instituto de Cerámica y Vidrio, CSIC, 28049 Cantoblanco, Madrid, Spain;(2) E.T.S.I. Telecomunicación, Univ. Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain |
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| Abstract: | We study the temperature dependence of grain resistivity in ZnO ceramic varistors (300–430 K), finding a positive temperature coefficient (PTC). We devise a high-frequency procedure that allow us to obtain the concentration and energy position of the shallow donor. The observed behavior is consistent with a shallow donor approaching complete ionization, and with an electron mobility mainly controlled by lattice (both optical and acoustical) scattering. The impact of this behavior on varistor performance under high-current pulse loads is discussed. |
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| Keywords: | varistors electrical properties bulk conductivity |
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