| 同步整流功率MOSFET特性及研究现状 |
| |
| 引用本文： | 任敏,谢驰,李佳驹,李泽宏,高巍,张金平,张波.同步整流功率MOSFET特性及研究现状[J].微电子学,2018,48(3):390-394. |
| |
| 作者姓名： | 任敏 谢驰 李佳驹 李泽宏 高巍 张金平 张波 |
| |
| 作者单位： | 电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054,电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054 |
| |
| 基金项目： | 国家自然科学基金资助项目(51307014) |
| |
| 摘 要： | 为了降低开关电源的功率损耗,同步整流技术采用功率MOSFET替代肖特基二极管,实现了更高的整流效率。简要介绍了同步整流技术的原理,并结合原理,深入分析了应用于同步整流的功率MOSFET与常规功率MOSFET在电学特性上的差异。总结了近年来同步整流功率MOSFET领域的研究进展。
|
| 关 键 词： | 同步整流 功率MOSFET 功率损耗 导通电阻 体二极管 |
| 收稿时间： | 2017/9/12 0:00:00 |
The Characteristics and Research Status of Synchronous Rectification Power MOSFET |
| |
| REN Min,XIE Chi,LI Jiaju,LI Zehong,GAO Wei,ZHANG Jinping and ZHANG Bo.The Characteristics and Research Status of Synchronous Rectification Power MOSFET[J].Microelectronics,2018,48(3):390-394. |
| |
| Authors: | REN Min XIE Chi LI Jiaju LI Zehong GAO Wei ZHANG Jinping and ZHANG Bo |
| |
| Affiliation: | State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China,State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China,State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China,State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China,State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China,State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China and State Key Lab of Elec. Thin Films and Integr. Dev., Univ. of Elec. Sci. & Technol. of China, Chengdu 610054, P. R. China |
| |
| Abstract: | In order to reduce the power loss of the switching power supply, the Schottky diode was replaced by the power MOSFET in the synchronous rectification technology to achieve higher rectification efficiency. The mechanism of synchronous rectification technology was briefly introduced, and the differences in electrical characteristics between synchronous rectification power MOSFETs and the conventional ones were analyzed. At the same time, the research progress of synchronous rectification power MOSFETs in recent years was summarized. |
| |
| Keywords: | synchronous rectification power MOSFET power loss on-resistance body diode |
|
| 点击此处可从《微电子学》浏览原始摘要信息 |
|
点击此处可从《微电子学》下载全文 |
|
