硫粉气化温度对制备WS2薄膜的影响

采用熔融盐辅助化学气相沉积（CVD）法在蓝宝石（Al₂O₃）衬底上制备WS2薄膜，改变硫粉的气化温度（750~800 ℃），探寻其对WS₂薄膜生长的影响，为制备出大面积WS₂薄膜提供理论依据。采用光学显微镜、扫描电子显微镜（SEM）和拉曼（Raman）光谱对WS₂薄膜的形貌、结晶性和厚度进行分析。800 ℃时，WS₂薄膜平均边长可达310 μm，Raman特征峰的波数差为64.60 cm^-1（单层）。随着硫粉气化温度的升高，WS₂薄膜的生长经历了形貌及尺寸的转变，这表明在沉积过程中，硫粉引入时机对WS₂薄膜的形核、生长至关重要，适当的气化温度可以制备出尺寸较大、结晶性能良好的WS₂薄膜。

Effect of Gasification Temperature of Sulfur Powder on Preparation of Tungsten Disulfide Thin Films

Tungsten disulfide （WS₂） thin films were prepared by melting salt-assisted chemical vapor deposition （CVD） method on sapphire （Al₂O₃） substrate. To provide theoretical basis for the preparation of large-size WS₂ thin films，the gasification temperatures of sulfur powder were changed in the range of 750-800 ℃ to investigate their effects on the growth of WS₂ thin films. The morphology，crystallinity and thickness of WS₂ thin films were analyzed by optical microscope，scanning electron microscopy and Raman spectrometry，respectively. At 800 ℃，the average side length of WS₂ thin film is 310 μm，and the wave number difference of Raman characteristic peak is 64.60 cm^-1（monolayer）. With the increase of the gasification temperature of sulfur powder，the WS₂ thin films change in morphology and size，indicating that the timing of sulfur involved in the deposition process is crucial for the nucleation and growth of WS₂ crystals. Large-size WS₂ thin films with good crystallization performance can be prepared at appropriate gasification temperatures.