| 质子辐射导致CCD热像素产生的机制研究 |
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| 引用本文： | 刘元,文林,李豫东,何承发,郭旗,孙静,冯婕,曾俊哲,马林东,张翔,王田珲.质子辐射导致CCD热像素产生的机制研究[J].微电子学,2018,48(1):115-119, 125. |
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| 作者姓名： | 刘元 文林 李豫东 何承发 郭旗 孙静 冯婕 曾俊哲 马林东 张翔 王田珲 |
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| 作者单位： | 中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011;中国科学院大学, 北京 100049,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011;中国科学院大学, 北京 100049,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011;中国科学院大学, 北京 100049,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011;中国科学院大学, 北京 100049,中国科学院新疆理化技术研究所 特殊环境功能材料与器件重点实验室 新疆电子信息材料与器件 重点实验室, 乌鲁木齐 830011;中国科学院大学, 北京 100049 |
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| 基金项目： | 中国科学院西部之光重点项目(ZD201301)；中国科学院青年创新促进会和新疆维吾尔自治区科技人才培养项目(qn2015yx035) |
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| 摘 要： | 空间高能质子作用于电荷耦合器件(CCD)产生的热像素是空间成像系统性能退化的主要原因之一。为深入认识质子辐射导致CCD产生热像素的规律和机制,对行间转移CCD进行了不同能量(3,10,23 MeV)的质子辐射试验,研究了辐射导致CCD暗信号的退化和热像素产生的规律。试验结果表明,在较低辐射注量1E9 p/cm2下,CCD的暗信号退化很小,但热像素急剧增加。质子辐射能量越大,产生的热像素数量越多。结合粒子输运计算与理论分析表明,热像素产生原因是质子与半导体材料中的原子非弹性碰撞而形成的团簇缺陷。
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| 关 键 词： | 电荷耦合器件 质子辐射效应 热像素 |
| 收稿时间： | 2017/3/20 0:00:00 |
Study on Mechanism of Hot Pixels on CCD Induced by Protons |
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| LIU Yuan,WEN Lin,LI Yudong,HE Chengf,GUO Qi,SUN Jing,FENG Jie,ZENG Junzhe,MA Lindong,ZHANG Xiang and WANG Tianhui.Study on Mechanism of Hot Pixels on CCD Induced by Protons[J].Microelectronics,2018,48(1):115-119, 125. |
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| Authors: | LIU Yuan WEN Lin LI Yudong HE Chengf GUO Qi SUN Jing FENG Jie ZENG Junzhe MA Lindong ZHANG Xiang and WANG Tianhui |
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| Affiliation: | Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China;.University of Chinese Academy of Sciences, Beijing 100049, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China;.University of Chinese Academy of Sciences, Beijing 100049, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China;.University of Chinese Academy of Sciences, Beijing 100049, P.R.China,Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China;.University of Chinese Academy of Sciences, Beijing 100049, P.R.China and Xinjiang Key Lab.of Electronic Information Mater.and Dev., Key Lab.of Functional Mater.and Dev.for Special Environments,Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, P.R.China;.University of Chinese Academy of Sciences, Beijing 100049, P.R.China |
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| Abstract: | One of the main reasons for the performance degradation of space imaging system is hot pixels on image sensors (CCD) induced by protons. In order to investigate the mechanisms of hot pixels induced by protons, irradiation testing on interline transfer CCDs were carried out with several energies of protons in terms of 3,0 and 23 MeV. Through the comparison of measurement data under different irradiation test and different operation conditions, effects and mechanisms of hot pixels on devices were analyzed. The results showed that dark signals of CCDs changed slightly, while the numbers of hot pixels increased significantly when the proton fluency was at a low dose rate of 1E9 p/cm2. The generation of hot pixels showed a high correspondence with the irradiated energies of protons. The numbers of hot pixels increased with the increase of the proton energy. The testing data also were analyzed by applying particle transfer calculation and radiation physics theory. The results showed that hot pixels were mainly caused by proton inelastic collision in Si atoms which could produce cluster defects in bulk silicon. |
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