| 片式ZnO压敏电阻烧端工艺对限制电压比的影响 |
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| 引用本文： | 唐斌,祝忠勇,赖扬,伍尚国.片式ZnO压敏电阻烧端工艺对限制电压比的影响[J].电子元件与材料,2005,24(9):28-29. |
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| 作者姓名： | 唐斌 祝忠勇 赖扬 伍尚国 |
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| 作者单位： | 广东风华高新科技集团有限公司,广东,肇庆,526020 |
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| 摘 要： | 通过对烧端工艺中不同烧端温度以及保温时间的试验,研究了它们对片式ZnO压敏电阻器限制电压比的影响。结果表明:当烧端温度为850℃,保温时间15min时,产品的限制电压比最小。
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| 关 键 词： | 电子技术 片式ZnO压敏电阻器 烧端温度 保温时间 限制电压比 接触电阻 |
| 文章编号： | 1001-2028（2005）09-0028-02 |
| 收稿时间： | 2005-03-26 |
| 修稿时间： | 2005-03-26 |
Chip Multilayer ZnO Varistors: Effect of Termination Firing Process on Clamping Voltage Ratio |
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| TANG Bin,ZHU Zhong-yong,LAI Yang,WU Shang-guo.Chip Multilayer ZnO Varistors: Effect of Termination Firing Process on Clamping Voltage Ratio[J].Electronic Components & Materials,2005,24(9):28-29. |
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| Authors: | TANG Bin ZHU Zhong-yong LAI Yang WU Shang-guo |
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| Abstract: | The effect of temperature for terminal electrode firing and soak time on the clamping voltage ratio was investigated. The results show that the least clamping voltage ratio can be acquired when firing temperature is 850℃ and soak time is 15 min. |
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| Keywords: | electronic technology chip multilayer ZnO varistors firing temperature soak time clamping voltage ratio contact resistance |
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