| 热丝辅助等离子体化学气相法生长c－BN薄膜 |
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| 引用本文： | 姬荣斌,王万录,廖克俊,张斌. 热丝辅助等离子体化学气相法生长c－BN薄膜[J]. 硅酸盐学报, 1994, 0(2) |
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| 作者姓名： | 姬荣斌 王万录 廖克俊 张斌 |
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| 作者单位： | 兰州大学物理系，厦门大学物理系 |
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| 摘 要： | 用热丝辅助射频等离子体化学气相沉积法（ＰＣＶＤ）合成：ｃ－ＢＮ薄膜获得成功。实验结果表明，灯丝温度、反应气压、衬底温度、灯丝与衬底距离对薄膜质量有重要影响。
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| 关 键 词： | 立方氮化硼薄膜，射频等离子体，化学气相沉积法，生长条件 |
THE EFFECT OF GROWTH CONDITIONS ON QUALITY OF c-BN FILMS THESISED BY HOT- FILAMENT ASSISTED RF PLASMA CVD METHOD |
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| Wang Wanlu. THE EFFECT OF GROWTH CONDITIONS ON QUALITY OF c-BN FILMS THESISED BY HOT- FILAMENT ASSISTED RF PLASMA CVD METHOD[J]. Journal of The Chinese Ceramic Society, 1994, 0(2) |
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| Authors: | Wang Wanlu |
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| Affiliation: | Wang Wanlu,Department of Physics,Lanzhou University,Lanzhou 730001.,Wang Wanlu,Liao Kejun,Zhang Bin |
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| Abstract: | he experimental results of synthesis of c- BN films using hot- filament assisted RF plasma CVDare given in this paper.The results show that filament temperature,substrate temperature,pressure of reactivegases and substrate-to-filament distance have very important effects. |
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| Keywords: | cubic boron nitride film plasma CVD growth condition : |
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