4H-SiC normally-off vertical junction field-effect transistor with high current density |
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| Authors: | Tone K. Zhao J.H. Fursin L. Alexandrov P. Weiner M. |
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| Affiliation: | Dept. of Electr. & Comput. Eng., State Univ. of New Jersey, Piscataway, NJ, USA; |
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| Abstract: | 4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-/spl mu/m vertical p/sup +/n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V/sub bl/ of 1 726 V is demonstrated with an on-state current density of 300 A/cm/sup 2/ at a drain voltage of 3 V. The low specific on-resistance R/sub on-sp/ of 3.6 m/spl Omega/cm/sup 2/ gives the V/sub bl//sup 2//R/sub on-sp/ value of 830 MW/cm/sup 2/, surpassing the past records of both unipolar and bipolar 4H-SiC power switches. |
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