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Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature |
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| Authors: | Asawin Sinsarp Takashi Manago Fumiyoshi Takano Hiro Akinaga |
| Affiliation: | (1) Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba Ibaraki, 305-8568, Japan;(2) Department of Electronics and Computer Science, Faculty of Science Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda Yamaguchi, 756-0884, Japan;(3) Present address: Department of Physics, Faculty of Science, Mahidol University, Rama 6 Road, Bangkok, 10400, Thailand |
| Abstract: | We report zero-magnetic-field spin injection from FePt into GaAs at room temperature using FePt/MgO/GaAs-based light-emitting diode heterostructures. Experiments are performed on two samples with different compositions; Fe61Pt39 and Fe57Pt43. The polarizations of injected electrons at 0 T for these two samples are at least 1.5% and 3.3%, respectively. The higher zero-magnetic-field injected spin polarization is considered to be due to the better remanent perpendicular magnetization of the FePt layer in the sample with Fe57Pt43. |
| Keywords: | Spin injection Perpendicular magnetization Tunneling junction FePt MgO |
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