| Diffusion Growth Model of Doping—impurity Longitudinal Profile in Grown Material by MOCVD and Chloride VPE |
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| 作者姓名： | LIUBaojun |
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| 作者单位： | TianjinNormalUniversity,Tianjin300074,CHN |
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| 基金项目： | Supported by National Natural Science Foundation of China (No.69386003). |
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| 摘 要： | The program process of the longitudinal impurity profile introduced in the quantum well(QW)laser and microwave electronic materials in analysed,based on the growth system by metalorganic chemical vapor deposition(MOCVD)and microwave electronic materials and chloride vapor phase epitaxy(VPE).The quantitative solution of the final longitudinal direction impurity distribution using the mathematical physics model of impurity carrier-gas transport drift and rediffusion in growth process was carried out.A technology for giving a reference to grown imputity profile of abrupt doping and uniform longitudinal direction based on the theory is presented.
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| 关 键 词： | 化学气相沉积 漂流扩散 杂质分布图 分散生长模型 量子阱 半导体 |
| 收稿时间： | 1998/3/27 |
Diffusion Growth Model of Doping-impurity Longitudinal Profile in Grown Material by MOCVD and Chloride VPE |
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| LIUBaojun.Diffusion Growth Model of Doping-impurity Longitudinal Profile in Grown Material by MOCVD and Chloride VPE[J].Semiconductor Photonics and Technology,1998,4(3):146-152. |
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| Abstract: | The program process of the longitudinal impurity profile introduced in the quantum well(QW)laser and microwave electronic materials in analysed,based on the growth system by metalorganic chemical vapor deposition(MOCVD)and microwave electronic materials and chloride vapor phase epitaxy(VPE).The quantitative solution of the final longitudinal direction impurity distribution using the mathematical physics model of impurity carrier-gas transport drift and rediffusion in growth process was carried out.A technology for giving a reference to grown imputity profile of abrupt doping and uniform longitudinal direction based on the theory is presented. |
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| Keywords: | drift diffusion longitudinal impurity profile MOCVD |
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