Temperature and Pressure Dependence of Elastic Constants and Related Parameters for InP Semiconductor

Based on the empirical pseudo-potential method (EPM), the symmetric and anti-symmetric pseudo-potential form factors have been adjusted to match the calculated energy gaps of InP with the corresponding experimental values. The adjusted symmetrical and anti-symmetrical form factors at G(1,1,1) have been used to calculate the polarity of the considered material. The elastic constants C ₁₁, C ₁₂ and C ₄₄ of InP have been obtained. The knowledge of these constants helps us to determine their related elastic parameters such as bulk (B _u ), shear (C _s ) and Young’s (Y ₀) moduli. Other important parameters such as Poisson’s ratio (σ ), linear compressibility (C ₀ ), Cauchy ratio (C _a ) , Born ratio (B ₀), isotropy factor (A ), bond stretching (α ), bond binding force (β ) and internal strain parameter (ζ ) for InP have also been calculated. The variation of all studied quantities with temperature and pressure has been investigated. Our results show a good agreement with the available experimental data. Most of our data may be taken as references especially for high values of temperature and pressure.