Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation |
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Authors: | Liang?Pang Hui-Chan?Seo Patrick?Chapman Ilesanmi?Adesida Kyekyoon ?Kim |
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Affiliation: | (1) North Carolina State University, Power Semiconductor Research Center, Raleigh, 27695, NC; |
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Abstract: | Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of
Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted
ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire
and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific
contact resistivity of 5.86 × 10−7 Ω cm2, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited
to fabricating HEMTs for high-power applications. |
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