| Novel IGBT SPICE Model with Non-destructive Parameter Extraction and Comparison with Measurements |
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| 引用本文： | YUAN Shou-cai,ZHU Chang-chun,LIU Jun-hua. Novel IGBT SPICE Model with Non-destructive Parameter Extraction and Comparison with Measurements[J]. 半导体光子学与技术, 2002, 8(3): 157-165 |
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| 作者姓名： | YUAN Shou-cai ZHU Chang-chun LIU Jun-hua |
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| 作者单位： | School of Electron. and Inform. Eng.，Xi'an Jiaotong University，Xi'an 710049，CHN |
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| 基金项目： | 国家自然科学基金，Doctoral Foundation by Education Committee of China |
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| 摘 要： |
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| 收稿时间： | 2001-12-14 |
Novel IGBT SPICE Model with Non-destructive Parameter Extraction and Comparison with Measurements |
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| YUAN Shou-cai,ZHU Chang-chun,LIU Jun-hua. Novel IGBT SPICE Model with Non-destructive Parameter Extraction and Comparison with Measurements[J]. Semiconductor Photonics and Technology, 2002, 8(3): 157-165 |
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| Authors: | YUAN Shou-cai ZHU Chang-chun LIU Jun-hua |
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| Affiliation: | School of Electron. and Inform. Eng., Xi'an Jiaotong University, Xi'an 710049, CHN School of Electron. and Inform. Eng., Xi'an Jiaotong University, Xi'an 710049, CHN School of Electron. and Inform. Eng., Xi'an Jiaotong University, Xi'an 710049, CHN |
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| Abstract: | A subcircuit-based model for the insulated gate bipolar transistor(IGBT) is proposed and optimized. The IGBT wide base conductivity modulated resistor is effectively equivalent by using a voltage controlled resistor. Based on analytical equation describing the semiconductor physics, the model parameters are extracted accurately via measured data without device destruction. Employing the MOS-level-8 SPICE model, the proposed IGBT subcircuit model gives more simulation accuracy and easy convergence, the simulation results are verified by comparison with measured results. |
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| Keywords: | IGBT Model SPICE Simulation VDMOSFET |
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