Effect of temperature and electron irradiation on the I–V characteristics of Au/CdTe Schottky diodes |
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| Authors: | Manjunatha Pattabi Sheeja Krishnan Ganesh X Mathew |
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| Affiliation: | aDepartment of Materials Science, Mangalore University, Mangalagangothri 574 199, India;bMicrotron Centre, Department of Physics, Mangalore University, Mangalagangothri 574 199, India;cCentro de Investigacion en Energia, CIE-UNAM, 62580, Temixco, Morelos, Mexico |
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| Abstract: | The results of the studies on the effect of temperature and 8 MeV electron irradiation on the current–voltage (I–V) characteristics of the Au/CdTe Schottky diodes are presented in this article. Schottky diodes were prepared by evaporating Au onto n-type CdTe films electrodeposited onto stainless steel substrates. The forward and reverse current–voltage characteristics of these diodes were studied as a function of temperature. The diodes were subjected to 8 MeV electron irradiation at various doses and their effect on the I–V characteristics was studied. Some intrinsic and contact properties such as barrier height, ideality factor, and series resistance were calculated from the I–V characteristics. Diode ideality factor of the junctions were greater than unity. The ideality factor and the series resistance Rs increase with decrease in temperature. The conduction seems to be predominantly due to thermionic emission–diffusion mechanism. The resistance was found to increase with increasing dose. The leakage current, ideality factor and barrier height were found to be unaffected by electron irradiation up to, a dose of about 40 kGy. |
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| Keywords: | CdTe Schottky diode I– V characteristics Electron irradiation Electrodeposition |
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