Improved performance of 4K SRAM by means of CW laser annealing |
| |
| Authors: | Teng TC Shiau Y de Ornellas S Readdie J Wong E Chang G Ko S Skinner C |
| |
| Affiliation: | National Semiconductor, Santa Clara, USA; |
| |
| Abstract: | A 4K × 1 NMOS static RAM (MM2147) has been successfully fabricated by means of CW laser annealing. The access time was reduced by 10 ns compared with a thermally annealed control with no increase in power dissipation. This report demonstrates the feasibiligy of using CW laser annealing as a potential VLSI process technology. |
| |
| Keywords: | |
|
