| IGBT并联动态不均流温度特性研究 |
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| 引用本文： | 凌晨,胡安,唐勇.IGBT并联动态不均流温度特性研究[J].电力电子技术,2011,45(11):121-123. |
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| 作者姓名： | 凌晨 胡安 唐勇 |
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| 作者单位： | 海军工程大学,电力电子研究所,湖北武汉430033 |
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| 基金项目： | 国家自然科学基金重点项目(50737004)~~ |
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| 摘 要： | 绝缘栅双极型晶体管( IGBT)并联集成技术在现代电力电子领域中得到了日益广泛的应用,通常认为只要IGBT在初始工作时处于安全范围内,即使发生不均流也能正常工作.然而,IGBT工作一段时间后,产生的温度变化会对动态不均流产生影响.这里研究了温度对IGBT并联动态不均流的影响,设计了一组IGBT并联实验,采集了并联两模块...
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| 关 键 词： | 绝缘栅双极型晶体管 动态不均流 温度特性 |
Research on Temperature Characteristic of IGBT Parallel Connection Dynamic Current Imbalance |
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| LING Chen,HU An,TANG Yong.Research on Temperature Characteristic of IGBT Parallel Connection Dynamic Current Imbalance[J].Power Electronics,2011,45(11):121-123. |
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| Authors: | LING Chen HU An TANG Yong |
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| Affiliation: | LING Chen,HU An,TANG Yong(Naval University of Engineering,Wuhan 430033,China) |
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| Abstract: | Insulated gate bipolar transistor(IGBT) parallel connection is used increasingly in modern power electronic.People usually consider IGBT can keep working when safely at the beginning,even current imbalance is happening.But during IGBT working a space of time,the temperature changing can effect the dynamic current imbalance.This paper studies the influence of temperature on IGBT parallel connection dynamic current imbalance.A set of IGBT parallel experiment is designed,the IGBT datas in parallel at various t... |
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| Keywords: | insulated gate bipolar transistor dynamic current imbalance temperature characteristic |
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