| IGBT关断瞬态过压击穿特性研究 |
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| 引用本文： | 汪波,胡安,唐勇,陈明.IGBT关断瞬态过压击穿特性研究[J].电力电子技术,2011,45(9):32-34. |
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| 作者姓名： | 汪波 胡安 唐勇 陈明 |
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| 作者单位： | 海军工程大学,舰船综合电力技术国防科技重点实验室,湖北武汉430033 |
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| 基金项目： | 国家自然科学基金重点项目(50737004);国家自然科学基金委员会创新研究群体科学基金(50721063)~~ |
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| 摘 要： | 绝缘栅双极型晶体管(IGBT)过压击穿是一种常见的失效方式,由于线路和器件内部分布杂散电感,关断瞬态时会产生过大的电压尖峰从而引起过压击穿,通常误认为一旦发生过压击穿IGBT就会发生破坏性失效.针对此问题,基于IGBT结构和PN结雪崩电压击穿特性,从理论和实验出发研究了IGBT发生过压击穿时的工作特性和失效机理,说明了...
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| 关 键 词： | 绝缘栅双极型晶体管 电压击穿 热失效 |
Study on Over-voltage Breakdown Characteristic of IGBT for Turn-off Transient |
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| WANG Bo,HU An,TANG Yong,CHEN Ming.Study on Over-voltage Breakdown Characteristic of IGBT for Turn-off Transient[J].Power Electronics,2011,45(9):32-34. |
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| Authors: | WANG Bo HU An TANG Yong CHEN Ming |
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| Affiliation: | WANG Bo,HU An,TANG Yong,CHEN Ming(National Key Laboratory for Vessel Integrated Power System Technology,Naval University of Engineering,Wuhan 430033,China) |
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| Abstract: | Over-voltage breakdown is one of the common failure mechanisms to insulated gate bipolar transistor(IGBT).As distributing induction present in circuit and device,a high inducted peak voltage in transient turn-off brings over-voltage break-down.Aimed to generally fault ideal that IGBT will be devastating failure once exceeding breakdown voltage,this paper studies theoretically and experimentally work characteristic and failure mechanism of IGBT illumi-nates that the essence in over-voltage breakdown failure ... |
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| Keywords: | insulated gate bipolar transistor over-voltage breakdown thermal failure |
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