| IGBT结温及温度场分布探测研究 |
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| 引用本文： | 陈明,胡安,唐勇,汪波. IGBT结温及温度场分布探测研究[J]. 电力电子技术, 2011, 45(7): 130-132 |
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| 作者姓名： | 陈明 胡安 唐勇 汪波 |
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| 作者单位： | 海军工程大学,舰船综合电力技术国防科技重点实验室,湖北武汉430033 |
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| 基金项目： | 国家自然科学基金重点项目(50737004)~~ |
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| 摘 要： | 绝缘栅双极型晶体管(IGBT)采用传统的集总参数热路法只能得到一个平均结温,不能获得芯片表面的温度场分布,因此有必要开展结温探测及温度场分布研究.先在数值仿真软件ANSYS热仿真分析环境里采用有限单元法(FEM)得到模块温度场分布,利用红外热成像仪探测IGBT模块芯片表面结温,获得了结温瞬态温度场分布,分析了结温温升及...
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| 关 键 词： | 绝缘栅双极型晶体管 结温 温度场分布 |
Detecting and Analyzing of IGBT Junction Temperature Field Distribution |
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| CHEN Ming,HU An,TANG Yong,WANG Bo. Detecting and Analyzing of IGBT Junction Temperature Field Distribution[J]. Power Electronics, 2011, 45(7): 130-132 |
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| Authors: | CHEN Ming HU An TANG Yong WANG Bo |
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| Affiliation: | CHEN Ming,HU An,TANG Yong,WANG Bo(Naval University of Engineering,Wuhan 430033,China) |
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| Abstract: | The heat transfer model of the insulated gate bipolar transistor(IGBT) is traditionally derived by lumped parameters thermal network method,only an average junction temperature can be attained,while the accurate tempera-ture field distribution is unknown.The temperature field distribution numerical simulation result is derived by finite element method(FEM) in the numerical simulator ANSYS.The temperature field distribution of the surface of chip are detected by mid-wave infrared imaging camera,the character... |
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| Keywords: | insulated gate bipolar transistor junction temperature temperature field distribution |
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