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微谐振器中静电切向阻力的仿真分析
引用本文:侯利程,沈雪瑾,陈晓阳,王旭.微谐振器中静电切向阻力的仿真分析[J].机械设计与研究,2006,22(3):44-46,56.
作者姓名:侯利程  沈雪瑾  陈晓阳  王旭
作者单位:上海大学,机械自动化系,上海,200072
摘    要:微谐振器在MEMS器件中广泛作为感知或致动单元,但其工作在静电场中的部分构件,因微小间隙常会产生静电切向阻力。通过简化硅微谐振器为一微平行板电容模型,利用有限元仿真软件ANSYS时光滑与粗糙表面平板所受到的静电切向阻力进行了仿真分析。结果表明:静电阻力随着平板之间电压、ly/d的增大而增大,光滑表面平板模型仿真结果和理论结果具有较好的一致性,而粗糙表面平板模型仿真结采和理论结果的偏差随着电压的增大而增大。

关 键 词:微谐振器  静电阻力  表面粗糙度
文章编号:1006-2343(2006)03-44-04
收稿时间:2005-10-10
修稿时间:2005-10-10

Simulation of Electrostatic Force of the Micro-resonators With Micro-clearance
HOU Li-cheng,SHEN Xue-jin,CHEN Xiao-yang,WANG Xu.Simulation of Electrostatic Force of the Micro-resonators With Micro-clearance[J].Machine Design and Research,2006,22(3):44-46,56.
Authors:HOU Li-cheng  SHEN Xue-jin  CHEN Xiao-yang  WANG Xu
Affiliation:Department of Mechanical Automation,Shanghai University,Shanghai 200072, China
Abstract:The micro-resonator widely used in the MEMS component as the sensation or execution unit,but parts of its components work in electrostatic field,the movement of the component would be hindered by the electrostatic resistance.Based on the finite element simulation software ANSYS,The silicon-micro-resonator was simplified to a micro-parallel-plate electric capacity model.the electrostatic resistance of the micro-parallel-plate with smooth surface and rough surface has been simulated.The result indicates: the electrostatic resistance increase as the voltage or l_y/d increase,The simulation result and the theory result has a better uniformity in the smooth-surface-plate model simulation,but the deviation between the simulation result and the theory result increases along with the voltage increases in the rough-surface-plate.
Keywords:ANSYS
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