| 光催化氧化对GaN材料腐蚀电化学及化学机械抛光的影响 |
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| 引用本文： | 韦伟,张保国,王万堂,李浩然,李烨. 光催化氧化对GaN材料腐蚀电化学及化学机械抛光的影响[J]. 电镀与涂饰, 2021, 40(1): 41-47. DOI: 10.19289/j.1004-227x.2021.01.008 |
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| 作者姓名： | 韦伟 张保国 王万堂 李浩然 李烨 |
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| 作者单位： | 河北工业大学电子信息工程学院,天津 300130;天津市电子材料与器件重点实验室,天津 300130;河北工业大学电子信息工程学院,天津 300130;天津市电子材料与器件重点实验室,天津 300130;河北工业大学电子信息工程学院,天津 300130;天津市电子材料与器件重点实验室,天津 300130;河北工业大学电子信息工程学院,天津 300130;天津市电子材料与器件重点实验室,天津 300130;河北工业大学电子信息工程学院,天津 300130;天津市电子材料与器件重点实验室,天津 300130 |
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| 基金项目： | 河北省高层次人才资助项目百人计划项目 |
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| 摘 要： | 考察了氮化镓(GaN)晶片在不同质量分数和pH的溴酸钾(KBrO3)溶液中的腐蚀电化学行为.结果显示,GaN在溴酸钾质量分数为1％时腐蚀电位最低.在此基础上使用光催化氧化法能够显著降低腐蚀电位,使GaN材料的腐蚀速率进一步提高.CMP实验结果显示:紫外光(UV)的加入使GaN在1％KBrO3溶液(pH=4)中的抛光速率...
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| 关 键 词： | 氮化镓 溴酸钾 腐蚀电化学 化学机械抛光 光催化氧化 表面粗糙度 |
Effect of photocatalytic oxidation on corrosion electrochemistry and chemical mechanical polishing of GaN |
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| WEI Wei,ZHANG Baoguo,WANG Wantang,LI Haoran,LI Ye. Effect of photocatalytic oxidation on corrosion electrochemistry and chemical mechanical polishing of GaN[J]. Electroplating & Finishing, 2021, 40(1): 41-47. DOI: 10.19289/j.1004-227x.2021.01.008 |
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| Authors: | WEI Wei ZHANG Baoguo WANG Wantang LI Haoran LI Ye |
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| Affiliation: | (School of Electronic and Information Engineering,Hebei University of Technology,Tianjin 300130,China;Tianjin Key Laboratory of Electronic Materials and Devices,Tianjin 300130,China) |
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| Abstract: | The electrochemical corrosion of gallium nitride(GaN)wafer in potassium bromate(KBrO3)solution with different mass fractions and pHs was studied.The results showed that the corrosion potential of GaN was the lowest when potassium bromate was 1wt.%.On this basis,the photocatalytic oxidation method could significantly reduce the corrosion potential of GaN,further enhancing its corrosion rate.The results of CMP experiment showed that the polishing rate of GaN in 1wt.%KBrO3 solution(pH=4)was increased by ultraviolet(UV)irradiation,and even higher by adding SnO2 as a photocatalyst.The polishing rate of GaN reached up to 502.4 nm/h when using 1wt.%of KBrO3 and 0.2wt.%SnO2 at pH 4 under ultraviolet irradiation.The root mean square roughness of the polished GaN wafer surface was 0.11 nm. |
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| Keywords: | gallium nitride potassium bromate corrosion electrochemistry chemical mechanical polishing photocatalytic oxidation surface roughness |
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