| AlGaN/GaN HEMT场板结构对与表面态相关的延迟特性的影响 |
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| 引用本文： | 雷勇,陆海.AlGaN/GaN HEMT场板结构对与表面态相关的延迟特性的影响[J].半导体学报,2015,36(7):074007-4. |
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| 作者姓名： | 雷勇 陆海 |
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| 摘 要： | 为了研究AlGaN/GaN HEMT器件中场板结构对电流崩塌效应影响的物理机理，我们运用数值模拟的方法研究了场板结构和与表面态相关的栅延迟现象之间的关系。模拟显示场板结构可以显著地抑制电流崩塌效应的强度，但是对延迟时间没有影响。场板结构可以增大AlGaN表面附近的空穴积累，导致表面态的离化率增大从而抑制器件的电流崩塌。
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| 关 键 词： | HEMT current collapse gate lag field plate (FP) surface states |
| 修稿时间： | 3/5/2015 12:00:00 AM |
Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT |
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| Lei Yong and Lu Hai.Influence of field plate on surface-state-related lag characteristics of AlGaN/GaN HEMT[J].Chinese Journal of Semiconductors,2015,36(7):074007-4. |
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| Authors: | Lei Yong and Lu Hai |
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| Affiliation: | 1. School of Physics and Optoelectronic Engineering,Nanjing University of Information Science and Technology,Nanjing 210044,China;2. School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China |
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| Abstract: | The relationship between AlGaN/GaN HEMT gate field plate (FP) and surface-state-related gate lag phenomena is investigated by two-dimensional numerical transient simulations to study the mechanism of the influence of FPs on current collapse. The simulations reveal that adding a field plate has a noticeable impact on the extent of current collapse while it has no influence on lapsed time. The FP is found to suppress current collapse through reducing the ionization probability of surface states by enhancing free hole accumulation next to the AlGaN surface between gate and drain. |
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| Keywords: | HEMT current collapse gate lag field plate (FP) surface states |
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