MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 μmVCSELs |
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| Authors: | Sagnes I. Le Roux G. Meriadec C. Mereuta A. Saint-Girons G. Bensoussan M. |
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| Affiliation: | Lab. pour la Photonique et les Nanostructures, CNRS, Bagneux; |
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| Abstract: | A new MOCVD InP/AlGaInAs distributed Bragg reflector for long-wavelength VCSELs is presented. The InP/AlGaInAs system presents a high potential for 1.55 μm VCSELs owing to the combination of its high refractive index contrast (Δn≃0.34) and its low conduction band discontinuity (ΔEc≃150 meV). InP/AlGaInAs mirrors and one half VCSEL (bottom mirror and λ cavity) have been fabricated for the first time using AlGaInAs transparent to 1.55 μm |
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