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Activation characterization of non-evaporable Ti-Zr-V getter films by synchrotron radiation photoemission spectroscopy |
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| Authors: | Chien-Cheng Li Jow-Lay Huang Ding-Fwu Lii |
| Affiliation: | a Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, ROC b Frontier Material and Micro/Nano Science and Technology Center, National Cheng Kung University, Tainan 701, Taiwan, ROC c Intellectual Property Exchange Limited, Hsinchu 310, Taiwan, ROC d Department of Electrical Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, ROC e National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan, ROC |
| Abstract: | The effect of activation temperature on the degree of reduction of dense and porous TiZrV films was investigated by synchrotron radiation photoemission spectroscopy. The dense and porous TiZrV films have similar composition and thickness, and their specific surface areas are 2 m2/g and 13 m2/g, respectively. Comparing the previous results of the porous TiZrV film [Chien-Cheng Li, Jow-Lay Huang, Ran-Jin Lin, Chia-Hao Chen, Ding-Fwu Lii, Thin Solid Films 515, (2006) 1121.], the degree of activation of the porous TiZrV film is lower than that of the dense TiZrV film. To complete the activation treatment of the dense and porous TiZrV films, the activation temperature must be higher than 350 °C or the activation time must be longer than 30 min. |
| Keywords: | Getter NEG TiZrV BET Porous films Glancing angle SRPES |
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