|
|||||
|
|
The reverse recovery characteristics of an SiC superjunction MOSFET with a p-type Schottky diode embedded at the drain side for improved reliability |
|
| Authors: | Vudumula Pavan Kotamraju Siva |
| Affiliation: | 1.Indian Institute of Information Technology Sri City, Sri City, Andhra Pradesh, India ; |
| Abstract: | |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |