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Investigation of 6-armchair graphene nanoribbon tunnel FETs
Authors:Aghanejad Ahmadchally  Alireza  Gholipour  Morteza
Affiliation:1.Faculty of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, 47148-71167, Iran
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Abstract:Journal of Computational Electronics - A simulation-based study of an n-type six-dimer-line armchair graphene nanoribbon (6-AGNR) tunnel field-effect transistor with asymmetric reservoir doping...
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