Investigation of 6-armchair graphene nanoribbon tunnel FETs |
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Authors: | Aghanejad Ahmadchally Alireza Gholipour Morteza |
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Affiliation: | 1.Faculty of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, 47148-71167, Iran ; |
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Abstract: | Journal of Computational Electronics - A simulation-based study of an n-type six-dimer-line armchair graphene nanoribbon (6-AGNR) tunnel field-effect transistor with asymmetric reservoir doping... |
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