The mutual influence between rare earth element doping and femtosecond laser-induced effects in Ga-As-Sb-S chalcogenide glass

Femtosecond laser-induced damage thresholds (LIDTs) of Ga_0.8As_29.2Sb₁₀S₆₀ glasses doped with gradient Tm³⁺ concentrations and the effects of laser-induced damage on the glass' luminescence properties were studied in this work. Tm³⁺ doping in the glass considerably decreased the LIDT, from 3394.8 to 1881.8 mJ/cm², when the Tm³⁺ concentration increased from 0 to 5000 ppmw. This was related to the absorption of Tm³⁺ around the femtosecond laser's wavelength and microstructural changes caused by the Tm³⁺ doping. On the other hand, the femtosecond laser changed the glass matrix's elemental distribution and microstructure. Although the laser damaged the glass, the luminescence properties were barely affected. Based on the changes, femtosecond laser damage mechanism of chalcogenide glass doped with rare earth element was firstly proposed.