Elucidating the electronic and magnetic properties of epitaxial graphene grown on SiC with a defective buffer layer |
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| Authors: | Huelmo C. Pereyra Iribarne Federico Denis Pablo A. |
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| Affiliation: | 1.Computational Nanotechnology, DETEMA, Facultad de Química, UdelaR, CC 1157, 11800, Montevideo, Uruguay
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| Abstract: | Journal of Materials Science - The epitaxial graphene layer (EG) grown on silicon carbide (SiC) is severely affected by the presence of the underlying graphene buffer layer (BL). However, little... |
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