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Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: An investigation into self-heating and geometrical effects |
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| Authors: | Kurd Zeynab Ahangari Zahra Mohammad Zamani Mohammad Javad Haghshenas Ali |
| Affiliation: | 1.Modeling and Simulation of Semiconductor Device Laboratory, School of Electrical and Computer Engineering, College of Engineering, University of Tehran, Tehran, Iran ;2.Department of Electronic, Faculty of Electrical Engineering, Yadegar-e-Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran ;3.Department of Electrical Engineering, Malayer University, Malayer, Hamedan, Iran ; |
| Abstract: | Journal of Computational Electronics - Variation of gate sidewall angle in V-shaped gate HEMTs impacts the device electrical performance, including self-heating effects, high-frequency operation... |
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