| Abstract: | Indium tin oxide (ITO) is the most commonly used front contact material for a variety of photovoltaic technologies. However, the presence of a high free carrier concentration in ITO thin films results in the well-known phenomenon of free carrier absorption in the near-infrared (NIR) region of the solar spectrum. This causes optical losses especially in those solar cells where the active layer is designed to preferentially absorb NIR photons. Therefore, a combination of high carrier mobility and high NIR transparency is desired for advanced transparent conductive oxides for substituting ITO in solar cells. In this work, cerium-doped indium oxide (ICeO) thin films are deposited by pulsed DC magnetron sputtering, giving a remarkable 137% improvement of the mobility (71 cm2 V?1 s?1) compared to the previous record value of 30 cm2 V?1 s?1 for DC magnetron sputtered cerium-doped ITO films on glass. When compared to conventional ITO films prepared in this work, the highest mobility of ICeO is found to be almost four times higher and also the NIR transmission is substantially enhanced. Theoretical modelling of the experimental results indicates that neutral impurity scattering limits the carrier mobility in our films. With the recent advancements in single and multi-junction organic and perovskite solar cells, the development of ICeO/glass substrates (as possible replacements for the commonly used ITO/glass substrates) demonstrates significant potential in minimizing optical losses in the NIR region. |
