Growth of heavily doped monocrystalline and polycrystalline SiGe-based quantum dot superlattices |
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Authors: | David Hauser Guillaume Savelli Marc PlissonnierLaurent Montès Julia Simon |
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Affiliation: | a CEA-Liten, Département des Technologies des NanoMatériaux, 17 rue des Martyrs, 38054 Grenoble cedex 9, Franceb IMEP-LAHC, Minatec, 3 parvis Louis Néel, BP 257, 38016 Grenoble cedex 1, France |
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Abstract: | Various SiGe-based Quantum Dot Superlattices (QDSLs) were grown using an industrial Chemical Vapor Deposition tool with the intent to develop efficient thermoelectric thin films at a large scale. We report first on the growth of monocrystalline SiGe-based QDSLs. We were able to control the SiGe spacer width and the sizes and densities of Ge dots. A vertical ordering behavior was observed for large dot structures, but not for those with the smallest dots (30-70 nm wide, 3 nm high). In situ B doping operated during growth led to hole densities of 5 × 1019 to 1 × 1020 cm− 3. We also report on the growth of polycrystalline SiGe-based QDSLs with the same equipment. We show in particular that vertically aligned Ge dots were formed in a similar way as in monocrystalline structures despite the presence of stacking faults and grain boundaries. A heavy p doping was also obtained on some of these structures. |
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Keywords: | Silicon-Germanium Chemical vapor-deposition Nanostructures Quantum dot superlattices Thermoelectric materials |
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