Impact of a-Si:H hydrogen depth profiles on passivation properties in a-Si:H/c-Si heterojunctions |
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Authors: | TF Schulze L KorteB Rech |
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Affiliation: | Helmholtz-Zentrum Berlin für Materialien und Energie, Institute Silicon Photovoltaics, Kekuléstr. 5, 12489 Berlin, Germany |
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Abstract: | We explore the (near-)interface structure of amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions as employed in high-efficiency heterojunction solar cells. We make use of secondary-ion-mass-spectroscopy profiles and minority carrier lifetime measurements taken on undoped deuterated amorphous silicon (i)a-Si:D] layers deposited on c-Si from deuterated silane at identical conditions as the hydrogenated layers we have analyzed previously T. F. Schulze et al., Appl. Phys. Lett. 96 (2010) 252102]. We briefly discuss the implications of the local interface structure for the c-Si surface passivation as well as for the heterojunction band offsets, and identify a route towards optimization of (i)a-Si:H layers as passivating buffers in a-Si:H/c-Si high-efficiency heterojunction solar cells. |
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Keywords: | Amorphous silicon Surface passivation Heterojunctions Photovoltaics Plasma-enhanced chemical vapor deposition Secondary ion mass spectroscopy |
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