| 激光能量对掺铒纳米Si晶薄膜形貌的影响 |
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| 引用本文： | 何雷,王文军,周阳,邓泽超. 激光能量对掺铒纳米Si晶薄膜形貌的影响[J]. 华北电力大学学报(自然科学版), 2006, 33(3): 110-112 |
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| 作者姓名： | 何雷 王文军 周阳 邓泽超 |
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| 作者单位： | 河北大学,物理科学与技术学院,河北,保定,071002;保定师范专科学校,物理系,河北,保定,071000;保定师范专科学校,物理系,河北,保定,071000;河北大学,物理科学与技术学院,河北,保定,071002 |
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| 摘 要： | 采用XeCl脉冲准分子激光器,保持激光脉冲比为1:2,分时烧蚀Er靶和高阻抗单晶Si靶。改变激光能量,在真空中沉积了掺Er非晶Si薄膜。在氮气保护下,分别在950℃,1010℃和1100℃温度下进行30min热退火处理,得到掺Er纳米晶Si薄膜。扫描电子显微镜的结果表明,高的退火温度或高的激光能量均会导致迷津结构的形成。
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| 关 键 词： | 掺Er纳米Si晶粒 脉冲激光烧蚀沉积 形貌 |
| 文章编号： | 1007-2691(2006)03-0110-03 |
| 修稿时间： | 2005-12-22 |
Influence of laser energy on morphology of nanocrystalline silicon films prepared by laser ablation |
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| HE Lei,WANG Wen-jun,ZHOU Yang,DENG Ze-chao. Influence of laser energy on morphology of nanocrystalline silicon films prepared by laser ablation[J]. Journal of North China Electric Power University, 2006, 33(3): 110-112 |
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| Authors: | HE Lei WANG Wen-jun ZHOU Yang DENG Ze-chao |
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| Abstract: | In the experimental situation,the Er and Si targets are ablated alternately with the pulse-number-ratio of 1: 2 by a XeCl excimer laser.The Er-doped amorphous Si films are prepared in vacuum by different laser energy.The as-formed films,being annealed for 30 minutes at the constant temperature of 950℃,1010℃or 1100℃in N2 gas,are converted into Er-doped nanocrystalline Si films.The scanning images of electron microscopy show that high annealing temperature or high laser energy can induce the nanocrystalline Si film with mazes. |
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| Keywords: | Er-doped nanocrystalline Si film pulsed laser ablation morphology |
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