a Silicon State Key Laboratory, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, PR China
b Institute for Chemical Research, Kyoto University, Gokasho, Uji-shi, Kyoto-fu 611, Japan
Abstract:
Ti1−xVxO2 solid solution film photoelectrodes were prepared by the dip-coating sol–gel method. X-ray diffraction and X-ray photoelectron spectroscopy were employed to ensure the formation of the solid solution and their composition. Obvious photoresponses were observed in the visible region for the solid solution film electrodes with x0.05 and the red shift of the photoresponse was enhanced with increasing x. Moreover, the solid solution film electrodes were found to be photoelectrochemically stable. However, the onset potential of photocurrent shifted positively with increasing x. Band model of the solid solution was suggested to explain the effects of the vanadium incorporation on the photoelectrochemical properties.