| 通过直接栅电流测量研究PMOSFET's热载流子损伤 |
| |
| 引用本文： | 张进城,郝跃,刘海波. 通过直接栅电流测量研究PMOSFET's热载流子损伤[J]. 半导体学报, 2002, 23(1): 61-64. DOI: 10.3969/j.issn.1674-4926.2002.01.014 |
| |
| 作者姓名： | 张进城 郝跃 刘海波 |
| |
| 作者单位： | 西安电子科技大学微电子研究所,西安,710071 |
| |
| 基金项目： | 国防预研基金;8.5.3.4; |
| |
| 摘 要： | 通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律.由此,给出了热载流子引起PMOSFET's器件参数退化的准确物理解释.并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法.
|
| 关 键 词： | 直接栅电流测量 热载流子损伤 |
| 文章编号： | 0253-4177(2002)01-0061-04 |
| 修稿时间： | 2001-03-12 |
Hot-Carrier Damage of PMOSFET''''s Identified by Direct Gate Current Measurement |
| |
| Zhang Jincheng,Hao Yue and Liu Haibo. Hot-Carrier Damage of PMOSFET''''s Identified by Direct Gate Current Measurement[J]. Chinese Journal of Semiconductors, 2002, 23(1): 61-64. DOI: 10.3969/j.issn.1674-4926.2002.01.014 |
| |
| Authors: | Zhang Jincheng Hao Yue Liu Haibo |
| |
| Abstract: | The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.An accurate physical explanation for the hot carrier induced device parameter degradation of PMOSFET's is presented.It is shown that the direct gate current measurement is a good method of studying the device damage growth and device parameter degradation. |
| |
| Keywords: | direct gate current measurement hot carrier damage |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
