| 提高MOSFET沟道载流子迁移率的新方法 |
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| 引用本文： | 龙伟,徐元森. 提高MOSFET沟道载流子迁移率的新方法[J]. 半导体学报, 1990, 11(11): 877-880 |
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| 作者姓名： | 龙伟 徐元森 |
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| 作者单位： | 中国科学院上海冶金研究所 上海(龙伟)，中国科学院上海冶金研究所 上海(徐元森) |
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| 摘 要： | 用HF掺杂薄氧化物层的MOSFET和MOS电容具有优良的电学特性。在本文所研究的有效场范围内,这种器件的有效表面迁移率为一般器件的1.7-2.4倍,这表明用HF增强氧化能得到速度更快的MOS器件。
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| 关 键 词： | MOSFET 载流子 迁移率 SiO2层 |
A Novel Method for Fabricating Higher Mobility MOSFET''''s |
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| Long Wei/. A Novel Method for Fabricating Higher Mobility MOSFET''''s[J]. Chinese Journal of Semiconductors, 1990, 11(11): 877-880 |
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| Authors: | Long Wei/ |
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| Affiliation: | Long Wei/Shanghai Institute of Metallurgy,Academia SinicaXu Yuansen/Shanghai Institute of Metallurgy,Academia Sinica |
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| Abstract: | The MOSFET's and MOS capacitors with HF-doped thin oxides have been shown to haveexcellent electrical characteristics. The effective surface mobilities of such HF-devices are 1.7-2.4 times higher than those of conventional devices over the channel effective field range studied. It indicates that MOS device with higher speeds could be achieved by HF-enhanced oxidation. |
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| Keywords: | MOSFET Mobility Silicon oxidation Fluorine SiO_2 film |
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