| 一种低噪声高线性度CMOS上变频混频器 |
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| 引用本文： | 金黎明,倪熔华,唐长文,闵昊. 一种低噪声高线性度CMOS上变频混频器[J]. 固体电子学研究与进展, 2008, 28(3) |
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| 作者姓名： | 金黎明 倪熔华 唐长文 闵昊 |
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| 作者单位： | 复旦大学专用集成电路与系统国家重点实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,上海,201203;复旦大学专用集成电路与系统国家重点实验室,上海,201203 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 设计实现了一种采用开关跨导型结构的低噪声高线性度上变频混频器,详细分析了电路的噪声特性和线性度等性能参数,本振频率为900 MHz。芯片采用0.18μm Mixed signal CMOS工艺实现。测试结果表明,混频器的转换增益约为8 dB,单边带噪声系数约为11 dB,输入参考三阶交调点(IIP3)约为10.5 dBm。芯片工作在1.8 V电源电压下,消耗的电流为10 mA,芯片总面积为0.63 mm×0.78 mm。
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| 关 键 词： | 混频器 开关跨导 噪声系数 三阶交调点 |
A Low Noise High Linearity CMOS Upconversion Mixer |
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| JIN Liming,NI Ronghua,TANG Zhangwen,MIN Hao. A Low Noise High Linearity CMOS Upconversion Mixer[J]. Research & Progress of Solid State Electronics, 2008, 28(3) |
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| Authors: | JIN Liming NI Ronghua TANG Zhangwen MIN Hao |
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| Affiliation: | JIN Liming NI Ronghua TANG Zhangwen MIN Hao(State Key Laboratory of ASIC , System,Fudan University,Shanghai,201203,CHN) |
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| Abstract: | In this paper,a low noise high linearity mixer is presented,exploiting a switched transconductor topology.Its noise figure(NF) and linearity are analyzed particularly.The LO frequency is 900 MHz.The mixer chip is implemented in 0.18 μm mixed signal CMOS process.The measurement result shows that the conversion gain of the mixer is about 8 dB,the SSB NF is about 11 dB,and the input-referred third-order intercept point(IIP3) is about 10.5 dBm.The chip consumes 10 mA at 1.8 V power supply and the size of the whole chip is 0.63 mm×0.78 mm. |
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| Keywords: | mixer switched transconductor noise figure third-order intercept point |
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