Effect of radial growth rate variation on resonant tunneling diode current-Voltage characteristics |
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Authors: | E T Koenig C I Huang B Jogai K R Evans C E Stutz D C Reynolds |
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Affiliation: | (1) Electronic Technology Laboratory, Wright Research and Development Center, 45433-6543 Wright-Patterson Air Force Base, Ohio, USA |
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Abstract: | The uniformity of electronic device characteristics is dependent on the uniformity of the epitaxial material. Uniformity is
particularly important for resonant tunneling diodes where small changes in well or barrier thickness can have profound effects
on the diode current-voltage characteristics. The variability of these characteristics due to growth rate nonuniformity for
epitaxial structures grown by molecular beam epitaxy has been documented and the magnitude of the thickness variations analyzed
using photoluminescence and a theoretical model. An increase of 17 meV was observed in the quantum well ground state, corresponding
to a 15% thinning of the well from the center to the edge of the substrate. |
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Keywords: | Resonant tunneling diode growth nonuniformity effects GaAs/AlGaAs |
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