A comparison of hydrogen and deuterium plasma treatment effects onpolysilicon TFT performance and dc reliability |
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| Authors: | Yeh-Jiun Tung Boyce J Ho J Xuejue Huang Tsu-Jae King |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
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| Abstract: | We compare the performance and dc reliability of conventional top-gate, self-aligned polysilicon (poly-Si) thin-film transistors (TFT's) after passivation by plasma deuteration and conventional plasma hydrogenation. An optimum deuteration temperature of 300°C is found, as compared to 350°C for hydrogenation. Deuteration yields comparable TFT performance as hydrogenation, while deuterated TFT's exhibit increased resistance to threshold voltage degradation under dc stress. These results indicate that deuteration is a promising alternative to hydrogenation for achieving high-performance, high-reliability poly-Si TFT's for applications such as flat-panel displays |
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